| PART |
Description |
Maker |
| IRHQ6110 IRHQ63110 |
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC
RADIATION HARDENED POWER MOSFET
|
HIROSE ELECTRIC Co., Ltd.
International Rectifier
|
| UPA1520H |
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
From old datasheet system
|
NEC Electron Devices
|
| IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP
POWER MOSFET THRU-HOLE (MO-036AB)
100V Quad N-Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 1.5AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB
TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五（巴西）直| 700mA的一d）| TO - 39封装
|
Microchip Technology, Inc.
|
| LB1275 |
7-Unit, Darlington Transistor Array
7-Unit Darlington Transistor Array
7-Unit,Darlington Transistor Array(7单元达林顿晶体管阵列)
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| BCV62C BCV62A BCV62B BCV62 |
?PNPSiliconDoubleTransistortobeusedasacurrentmirror?
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
PNP Silicon Double Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
