| PART |
Description |
Maker |
| VSMF3710 VSMF371009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHF5210 TSHF521009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
|
| TSHG820009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF5210 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| VSMB3940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| MGA-53543 |
MGA-53543 · 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343(SC-70)
50 MHz to 6 GHz High Linear Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| VSMF3710 VSMF3710-GS08 VSMF3710-GS18 VSMF371008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMF4710-GS08 VSMF4710-GS18 VSMF4710 |
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMG2700 VSMG2700-GS08 VSMG2700-GS18 |
High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF5210 TSFF521008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
