| PART |
Description |
Maker |
| IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份证\u003d 1.0安培
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A)
Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| IRF540NL IRF540NS IRF540NSTRR IRF540NLPBF IRF540NS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
Power MOSFET(Vdss=100V/ Rds(on)=44mohm/ Id=33A)
|
IRF[International Rectifier]
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）最大值\u003d 0.014ohm，身份证\u003d 72A条）
|
IR
International Rectifier, Corp.
|
| IRF9140 |
-100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)
|
International Rectifier
|
