| PART |
Description |
Maker |
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| PSD813F2V-15M1T PSD853F2V-15M1T PSD814F2V-15M1T PS |
Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 3.3 V
128K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52
128K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP64
128K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52
|
STMicroelectronics
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| TP28F010-90 TE28F010-150 |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel, Corp.
|
| ACT-F1288N-060P7Q ACT-F1288N-060P4T ACT-F1288N-060 |
EEPROM EEPROM
Cable Gland (Clamp); Connector Shell Size:24; Leaded Process Compatible:No; Length:2.56"; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 行为F128K8高兆位闪存单片
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高兆位闪存单片
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高1兆位闪存单片
Retriggerable monostable multivibrator 14-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70
Retriggerable monostable multivibrator 14-SOIC 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
D21 - BACKSHELL ENVIRON STRT MIL
D52 - BACKSHELL ENVIRON STRT MIL
CONNECTOR ACCESSORY
Retriggerable monostable multivibrator 14-SO 0 to 70
|
Aeroflex Circuit Techno...
Samsung Semiconductor Co., Ltd.
SUSUMU Co., Ltd.
Aeroflex, Inc.
Aeroflex Inc.
http://
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| CAT28F001HI-12BT CAT28F001HI-12TT CAT28F001NI-12BT |
1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit CMOS Boot Block Flash Memory
|
ON Semiconductor
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体（79.65十一
x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics
NXP Semiconductors N.V.
Microchip Technology, Inc.
ON SEMICONDUCTOR
|
| AT49BV001NT-90JL AT49BV001NT-12JL AT49LV001NT-70JL |
128K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
128K X 8 FLASH 2.7V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
128K X 8 FLASH 3V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
128K X 8 FLASH 3V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
128K X 8 FLASH 3V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
128K X 8 FLASH 3V PROM, 90 ns, PDIP32
|
Atmel, Corp.
ATMEL CORP
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