| PART |
Description |
Maker |
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T1G044QE-HCLE6 K4T1G044QE-HCLE7 K4T1G044QE-HCLF7 |
1Gb E-die DDR2 SDRAM
|
Samsung semiconductor
|
| K4T1G164QE K4T1G044QE K4T1G084QE |
1Gb E-die DDR2 SDRAM
|
Samsung Electronics
|
| K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T51043QJ |
512Mb J-die DDR2 SDRAM
|
Samsung
|
| K4T51163QC-ZCCC K4T51163QC-ZCD5 K4T51163QC-ZCD6 K4 |
512Mb C-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G084QC |
1Gb C-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T1G084QM-ZCCC K4T1G084QM-ZCD5 K4T1G044QM-ZCCC K4 |
1Gb M-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
