| PART |
Description |
Maker |
| S29GL512S11DHI010 S29GL01GS11DFIV010 S29GL01GS90FF |
GL-S MirrorBit? Eclipse Flash Non-Volatile Memory Family
GL-S MirrorBit? Eclipse?/a> Flash Non-Volatile Memory Family
GL-S MirrorBit? Eclipse?Flash Non-Volatile Memory Family
GL-S MirrorBit? Eclipse?Flash Non-Volatile Memory Family
|
SPANSION
|
| S29GL512S S29GL01GS S29GL128S S29GL256S |
GL-S MirrorBit? Eclipse Flash Non-Volatile Memory Family
|
SPANSION
|
| AM29LV640MH/L |
64 Mbit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersitileI/O Control (Advance Information)
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices
|
| AM29LV128ML40FI AM29LV128ML40FF AM29LV128ML40EI AM |
8M X 16 FLASH 3V PROM, 110 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?/a> 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?/a> Control
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?/a> 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?/a> Control
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?Control
|
SPANSION LLC
Advanced Micro Devices
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| S72NS512PE0AJBLC0 S72NS512PE0KJBGG0 S72NS512PE0KJB |
MirrorBit Flash Memory and DRAM
|
http://
SPANSION
|
| S72NS256P |
MirrorBit Flash Memory and DRAM
|
SPANSION
|
| AM29LV033MUU101RFI AM29LV033MUU112EI AM29LV033MUU1 |
32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 32兆位个M × 8位）的MirrorBit 3.0伏特，只有统一闪存部门与VersatileI / O控制
|
Advanced Micro Devices, Inc.
|
| S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64
256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64
1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64
128M X 1 FLASH 3V PROM, 100 ns, PBGA64
1G X 1 FLASH 3V PROM, 120 ns, PDSO56
1G X 1 FLASH 3V PROM, 130 ns, PDSO56
1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| AM70PDL127CDH AM70PDL129CDH |
(AM70PDL127CDH / AM70PDL129CDH) Data storage MirrorBit Flash
|
AMD
|
| S29GL512P11TFIV12 |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION
|
|
