| PART |
Description |
Maker |
| MTP5P06V |
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
|
MOTOROLA[Motorola, Inc]
|
| FK10SM-9 |
HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CF1/4LVTER6R8G CF1/4CVTEA6R8G CF1/4LT52R6R8G CF1/4 |
RESISTOR, CARBON FILM, 0.25 W, 2 %, 450 ppm, 6.8 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
KOA Speer Electronics,Inc.
|
| IRF331 IRF423 IRF320 IRF220 IRF351 IRF433 |
5.5 A, 350 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
2.2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
15 A, 350 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
|
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| 2SK2803 |
Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 3300uF; Voltage: 6.3V; Case Size: 10x25 mm; Packaging: Bulk 3 A, 450 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| NP10N045DHB |
10 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA MP-25 FIN CUT, TO-220 FIN CUT, 3 PIN
|
DOMINANT Opto Technologies Sdn. Bhd.
|
| OL2225 ON6805 OJ3005EA52 OJ3005ER52 OJ3005EA26 OJ3 |
RESISTOR, CARBON FILM, 0.125 W, 5 %, 450 ppm, 30 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, CARBON FILM, 0.125 W, 5 %, 700 ppm, 360000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, CARBON FILM, 0.125 W, 5 %, 700 ppm, 160000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, CARBON FILM, 0.125 W, 5 %, 450 ppm, 16 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, CARBON FILM, 0.125 W, 5 %, 700 ppm, 560000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
Ohmite Mfg. Co.
|
| ZVN0545G ZVN0545GTA |
0.14 A, 450 V, 50 ohm, N-CHANNEL, Si, POWER, MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N-channel MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| M57721 57721 |
450-512MHz 12.5V /7W /FM PORTABLE RADIO
450-512MHz 12.5V,7W,FM PORTABLE RADIO
450-512MHZ, 12.5V, 7W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| IRFZ24N-007 IRF9Z34-006PBF IRF9Z34-007PBF IRF9Z34- |
17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
10 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
4.9 A, 450 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8.8 A, 450 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
ITT, Corp.
VISHAY INTERTECHNOLOGY INC
|
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