PART |
Description |
Maker |
28F320S5 29060904 |
5 Volt FlashFile Memory From old datasheet system
|
Intel
|
E28F004SC-85 28F008SC 28F016SC G28F008SC-150 G28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT 8-MBIT SmartVoltage FlashFile Memory(8M位智能电压闪速存储器) 16-MBIT SmartVoltage FlashFile Memory(16M位智能电压闪速存储器) BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 85 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 字节宽SmartVoltage FlashFile Memory系列486兆比 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 120 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 100 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 2M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
|
Intel Corporation Intel Corp. Intel, Corp.
|
28F320S3 DT28F320S3-140 GT28F320S3-140 TE28F320S3- |
WORD-WIDE FlashFile MEMORY FAMILY Word-wide FlashFile memory. 32 Mbit, access speed 140 ns
|
Intel
|
28F008S3 28F016S3 |
3 V FlashFile Memory(3V闪速存储器)
|
Intel Corp.
|
TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F |
WORD-WIDE FlashFile MEMORY FAMILY
|
INTEL[Intel Corporation]
|
E28F160S5-100 E28F320S5-90 28F160S5 DA28F160S5-100 |
WORD-WIDE FLASHFILE MEMORY FAMILY
|
INTEL[Intel Corporation]
|
TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储 3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器) 3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory 8 Megabit (1M x 8), 5 Volt-only, Flash Memory IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
RC28F128J3A-150 E28F128J3A-150 |
3 Volt Intel StrataFlash Memory 3伏特英特尔StrataFlash存储 3 Volt Intel StrataFlash Memory 8M X 16 FLASH 2.7V PROM, 150 ns, PDSO56
|
Intel, Corp. http://
|
|