| PART |
Description |
Maker |
| HYS72V32220GU-75-C2 HYS64V32220GU-75-C2 HYS72V1630 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
|
Infineon Technologies AG
|
| HB52RF1289E2 HB52RF1289E2-75B |
1 GB Registered SDRAM DIMM 128-Mword ?72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M ?4 Components) PC133 SDRAM
128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM
|
Elpida Memory
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| IBM13N16644JCA-260T IBM13N16734JCA-260T IBM13N1664 |
x72 SDRAM Module
x64 SDRAM Module X64的内存模
16M x 64 One-Bank Unbuffered SDRAM Module(16M x 64 1组不带缓冲同步动态RAM模块6M x 64高速存储器阵列结构 1,600 × 64单银行无缓冲内存模组6x 64 1组不带缓冲同步动态内存模块（1,600 × 64高速存储器阵列结构））
|
DB Lectro, Inc.
International Business Machines, Corp.
|
| NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM
184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| MC4582DA727 |
8M x 72-Bit SDRAM Module
|
NEC Electronics
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HB52E649E12 HB52E649E12-A6B HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory, Inc.
|
| HYS64V16302GU-75-D HYS64V16302GU-75-C2 HYS64V16302 |
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,6004位，128MByte SDRAM内存模块168针脚无缓冲DIMM模块
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,60064位，128MByte SDRAM内存模块168针脚无缓DIMM模块
|
Infineon Technologies AG
|
