| PART |
Description |
Maker |
| LT1721IGNTRPBF LT1721CSTRPBF LT1721CGNTRPBF LT1720 |
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Dual, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
UltraFast:4.5ns at 20mV Overdrive 7ns at 5mV Overdrive
Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| LT1720 1720I |
Dual, 4.5ns, Single Supply 3V/5V Comparator with Rail-to-Rail Outputs
From old datasheet system
|
Linear
|
| EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏，10纳秒，同同步脉冲静态内存模块）
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块）
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?)
SSRAM Modules
|
Bourns, Inc.
Electronic Theatre Controls, Inc.
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
| EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
| M74HC534 M74HC534B1R M74HC534C1R M74HC534F1R M74HC |
OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT HC374 NON INVERTING - HC534 INVERTING
8-Bit, 1.25 MSPS Single Ch., Hardware Config., Low Power w/Auto or S/W PowerDown 24-TSSOP -40 to 85 八路D型触发器态输出的非反相HC374 - HC534反向
4.5ns Rail-to-Rail, High Speed Comparator in Microsized Packages 8-SOIC -40 to 125
|
ST Microelectronics
STMicroelectronics N.V.
|
| GS8160Z36T-133I |
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| LC4128V-10T100I |
IC,COMPLEX-EEPLD,128-CELL,10.5NS PROP DELAY,QFP,100PIN,PLASTIC
|
lattice
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| 5962-9312204MUX 5962-9312204MZX 5962-9312203MUX |
x16 EPROM
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps x16存储
|
Vicor, Corp.
|
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