| PART |
Description |
Maker |
| CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
| CY7C1302DV25-167BZC CY7C1302DV25-167BZI CY7C1302DV |
9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR垄芒 Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture
|
Cypress Semiconductor
|
| K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| AS7C33256PFD32A-166TQIN AS7C33256PFD32A-133TQCN AS |
3.3V 256K x 32/36 pipelined burst synchronous SRAM 256K X 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 256K x 32/36 pipelined burst synchronous SRAM 3.3 256 × 32/36管线爆裂同步SRAM
3.3V 256K x 32/36 pipelined burst synchronous SRAM 256K X 32 STANDARD SRAM, 3.5 ns, PQFP100
|
Alliance Semiconductor Corp...
Alliance Semiconductor, Corp.
|
| CY7C1305AV25 CY7C1305AV25-133BZC CY7C1305AV25-167 |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture
18-MBIT BURST OF 4 PIPELINED SRAM WITH QDR ARCHITECTURE
|
CYPRESS[Cypress Semiconductor]
|
| IDT71V546S117PFI IDT71V546S117PF IDT71V546S133PF 7 |
3.3V 128K x 36 ZBT Synchronous PipeLined SRAM
128K x 36 3.3V Synchronous SRAM with ZBT Feature Burst Counter and Pipelined Outputs
128K x 36/ 3.3V Synchronous SRAM with ZBT Feature/ Burst Counter and Pipelined Outputs
From old datasheet system
128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs
|
IDT[Integrated Device Technology]
|
| IDT71P74804 IDT71P74804S167BQ IDT71P74804S200BQ ID |
18Mb Pipelined QDR II SRAM Burst of 4
|
Integrated Device Technology
|
| CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
|
Cypress
|
| IDT71P72804S250BQ IDT71P72104 IDT71P72104S167BQ ID |
18Mb Pipelined QDRII SRAM Burst of 2
|
IDT[Integrated Device Technology]
|
