PART |
Description |
Maker |
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns 4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns -3.3V 4M x 4-Bit Dynamic RAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns 256k x 16 Bit FPM DRAM 5 V 50 ns 256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
MSM5116405C MSM5116405C-50TS-L |
4M X 4 EDO DRAM, 50 ns, PDSO24 4M×4 Dynamic RAM(4M×4动态RAM) 4米4动态RAM米4动态内存) From old datasheet system 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI ELECTRIC INDUSTRY CO LTD OKI SEMICONDUCTOR CO., LTD.
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http:// SIEMENS AG
|
IC41C82002 IC41LV82002 IC41C82002-50J IC41C82002-5 |
DYNAMIC RAM, EDO DRAM 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
VG2618160CJ-5 |
DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|