| PART |
Description |
Maker |
| MJ10016 ON1971 MJ10015 |
NPN SILICON POWER DARLINGTON TRANSISTORS
50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJ10005 ON1967 |
NPN SILICON POWER DARLINGTON TRANSISTORS
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SC5476 |
3 A, 85 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Planar Silicon Darlington Transistor
Darlington Transistors
|
Sanyo
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BDV65B BDV65A BDV65C |
Silicon NPN Power Transistors
Silicon NPN Darlington Power Transistor
|
Inchange Semiconductor Company Limited
|
| 2SD1196 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
|
SANYO SEMICONDUCTOR CO LTD
|
| 2N6576 2N6578 |
Leaded Power Transistor Darlington
NPN SILICON POWER DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| KSE5740 KSE5742 KSE5741 KSE5740TU KSE5741TU KSE574 |
High Voltage Power Switching In Inductive Circuits 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220
NPN Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
