| PART |
Description |
Maker |
| NE3514S02-T1C NE3514S02-T1D |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE325S01_02 NE325S01 NE325S01-T1 NE325S01-T1B NE32 |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE425S01_98 NE425S01 NE425S01-T1 NE425S01-T1B NE42 |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE32500N NE32500 NE32500M |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
|
CEL[California Eastern Labs]
|
| NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
| NE334S01 NE334S01-T1 NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE32500 NE27200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| SBFP540M |
Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications
|
Sanyo Semicon Device
|
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| EL2126CS EL2126CS-T7 EL2126CSZ EL2126 EL2126CW-T7A |
Ultra-Low Noise, Low Power, Wideband Amplifier OP-AMP, 2000 uV OFFSET-MAX, 80 MHz BAND WIDTH, PDSO8
Ultra-Low Noise, Low Power, Wideband Amplifier OP-AMP, 3000 uV OFFSET-MAX, 80 MHz BAND WIDTH, PDSO5
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
