PART |
Description |
Maker |
NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC] NEC Corp. NEC, Corp.
|
MHW2707A1 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
NE5511279A-T1A-A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Laboratories
|
2SK3391JXTL-E 2SK339107 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
2SK3391 2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
D2089UK D2089 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SEME-LAB[Seme LAB] TT electronics Semelab, Ltd.
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
|