| PART |
Description |
Maker |
| EKIN2-420X |
410-430 MHz,I/Q modulator
E-Series I/Q Modulator 410 - 430 MHz
|
MA-Com
MACOM[Tyco Electronics]
http://
|
| HPQ-05 |
410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS ROHS COMPLIANT, CASE AT577, 6 PIN
|
Mini-Circuits
|
| MLO80100-00420 |
VCO, 410 MHz - 430 MHz
|
IXYS, Corp.
|
| CYW2331 CYW2331ZITR |
PLL FREQUENCY SYNTHESIZER, 2000 MHz, PDSO20
Dual Serial Input PLL with 2.0-GHz and 600-MHz Prescalers
|
Cypress Semiconductor Corp.
http://
|
| UPD17068GF-XXX-3BA |
4-bit microcomputer with on-chip PLL freq. systhesizer
|
NEC
|
| S1M8831A/33 S1M8833X01-G0T0 S1M8831A01-G0T0 |
FRACTIONAL-N RF/INTEGER-N IF DUAL PLL 分数N射频/整数N如果双锁相环
PLL FREQUENCY SYNTHESIZER, 1650 MHz, CQCC24
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S5T8808X01-V0B0 S5T8808 S5T8808X01 |
PLL FREQUENCY SYNTHESIZER, 180 MHz, PDSO16
PLL FREQUENCY SHNTHESIZER FOR PAGER Data Sheet
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TB1231AN EE08400 |
From old datasheet system
PAL / NTSC 1CHIP (IF VCD PROCESSOR)IC
PAL/NTSC 1CHIP (IF VCD PROCESSOR) IC
|
TOSHIBA[Toshiba Semiconductor]
|
| MB15E07SLPFV1 MB15E07SLPV1 |
Single Serial Input PLL Frequency Synthesizer On-Chip 2.5 GHz Prescaler PLL FREQUENCY SYNTHESIZER, 2500 MHz, PBCC16
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
