| PART |
Description |
Maker |
| HUF75329D3 HUF75329D3S HUF75329D3ST HUF75329D3STNL |
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 20 A, 55 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDMC8015L |
7 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQA47P06SMD |
55 A, 60 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB
|
SEMELAB LTD
|
| STD36NH02L |
30 A, 24 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
STMICROELECTRONICS
|
| 2SK3524 |
N-CHANNE SILLCON POWER MOSFET
N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
|
Fuji Electric
Electronic Theatre Controls, Inc.
|
| SUD50P08-26-E3 |
50 A, 80 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| APT20M26WVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 65A 0.026 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| MT58LC128K32B4LG-6.8 |
128K X 32 STANDARD SRAM, 6.8 ns, PQFP100 MS-026, TQFP-100
|
TE Connectivity, Ltd.
|
| ICS8430DYI-11LFT ICS8430DYI-11T |
700 MHz, OTHER CLOCK GENERATOR, PQFP32 7 X 7 MM, 1.40 MM HEIGHT, MS-026, LQFP-32
|
Integrated Device Technology, Inc.
|
| CY7C1218H-166AXI CY7C1218H-166AXC |
32K X 36 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
|
Cypress Semiconductor, Corp.
|
|
