PART |
Description |
Maker |
SM5901AF |
compression and non compression type anti-shock memory controller with built-in 1M DRAM
|
NPC[Nippon Precision Circuits Inc]
|
SM5904BF |
compression and non compression type shock-proof memory controller
|
NPC[Nippon Precision Circuits Inc]
|
LP502 LP502-PLID |
AUDIO AMPLIFIER, PDSO8 PLID, 8 PIN LP502 - AGC-O Compression Preamplifier Low Distortion AGC Compression Amplifier
|
GENNUM[Gennum Corporation]
|
APL840N |
High quality voice synthesizer. 32 to 40 sec instant voice ROM.
|
Aplus Integrated Circuits
|
IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
JA21000 JA21XXX |
Useful Voice ROMless Voice Synthesizer And Controller
|
Jaztek
|
SSM2165-1S-REEL SSM2165-1S-REEL7 SSM2165-2S-REEL S |
Microphone Preamplifier with Variable Compression and Noise Gating Complete Microphone Conditioner in an 8-Lead Package with Variable Compression & Noise Gating Complete Microphone Conditioner in an 8-Lead Package with Variable Compression & Noise Gating
|
Analog Devices
|
IRF240SMD |
N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))
|
SemeLAB SEME-LAB[Seme LAB] Air Cost Control
|
S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man... N.A. ETC[ETC] List of Unclassifed Manufacturers
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|
SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
54104-3292 |
0.5 FPC Conn Zif Hsg Assy for SMT RA Upr Cont
|
Molex Electronics Ltd.
|