| PART |
Description |
Maker |
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| VG2618165CJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
| CYM7232 CYM7264 7232SP |
DRAM Accelerator Module(DRAM加速器模块) DRAM CONTROLLER, XMA
From old datasheet system
|
Cypress Semiconductor, Corp.
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|
| HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
SMSC, Corp.
|
