PART |
Description |
Maker |
S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc. SPANSION LLC
|
53S441 53S440 |
(53S440 / 53S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
63S280 |
(63S28x) High Performance 256 x 8 PROM TiW PROM
|
Monolithic Memories
|
8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破 Memory, Digital, Bipolar, 64K PROM
|
N/A
|
PY291A PY291A-25DMB PY291A-25WMB PY291A-25WC PY291 |
2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 25 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K × 8可重复编程胎膜早 2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 35 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K X 8 UVPROM, 35 ns, CDIP24
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp. Fujitsu, Ltd. Fujitsu Limited http:// Fujitsu Component Limited.
|
CY7C261 CY7C264 CY7C263 |
8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的PROM) 8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的 PROM) 8K的8电源开关和可重编程胎膜早破K的8功率转换和可重复编程的可编程
|
Cypress Semiconductor Corp.
|
M25P32-VMW6G M25P32-VMP6G M25P32-VMW6P |
4M X 8 FLASH 2.7V PROM, PDSO8 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 4M X 8 FLASH 2.7V PROM, DSO8
|
Numonyx Asia Pacific Pte, Ltd.
|
CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
|
M39432-12VNC6T M39432-15VNC6T M39432-20VNC6T M3943 |
512K X 8 FLASH 3V PROM, 120 ns, PDSO40 512K X 8 FLASH 3V PROM, 150 ns, PDSO40 512K X 8 FLASH 3V PROM, 200 ns, PDSO40 512K X 8 FLASH 3V PROM, 250 ns, PDSO40
|
STMICROELECTRONICS NUMONYX
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