| PART |
Description |
Maker |
| AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM
1 Megabit (128K x 8)
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| AT28C010-25FM_883 AT28C010-20FM_883 AT28C010-12FM_ |
1-Megabit (128K x 8) Paged Parallel EEPROMs
|
ATMEL Corporation
|
| AT28C010-12DK09 |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs
|
ATMEL Corporation
|
| AT28LV010-20JI AT28LV010-20JU AT28LV010-20PI AT28L |
1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs
|
ATMEL Corporation
|
| AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125
CMOS Dual Binary Up-Counter 16-SO -55 to 125
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| AT29BV010A-25 AT29BV010A-30JC AT29BV010A-30JI AT29 |
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
|
Atmel Corp.
|
| AT29BV010A AT29BV010A-20 AT29BV010A-20JC AT29BV010 |
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
|
ATMEL[ATMEL Corporation]
|
| IDT7MMV4101 IDT7MMV4101S10BG IDT7MMV4101S10BGI IDT |
128K x 24 Three Megabit 3.3V CMOS Static RAM 128K × 24.3V的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 128K X 24 STANDARD SRAM, 15 ns, PBGA119
Octal Buffers/Drivers With 3-State Outputs 20-PDIP -40 to 85 128K X 24 STANDARD SRAM, 12 ns, PBGA119
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| EN39LV010-45RNIP EN39LV010 EN39LV010-45RJI EN39LV0 |
1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
Eon Silicon Solution Inc.
Eon Silicon Solution In...
|
