| PART |
Description |
Maker |
| RF133 |
RF/IF Transceiver For GSM Applications
|
Conexant
|
| HD155121F |
RF Transceiver IC for GSM and PCN Dual band cellular systems
|
HITACHI[Hitachi Semiconductor]
|
| MC13760 |
GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver
|
Motorola, Inc
|
| UAA3536 |
Low-power GSM/GPRS/EDGE
triple-band Near-Zero IF transceiver
|
PHILIPS
|
| UAA3536HN |
Low power GSM/DCS/PCS multi-band transceiver
|
Philips
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| CX74063-26 |
RF TRANSCEIVER FOR MULTI-BAND GSM, GPRS, AND EDGE APPLICATIONS WITH POWER RAMPING CONTROLLER AND INTEGRATED CRYSTAL OSCILLATOR WITH 26 MHZ OUTPUT
|
Skyworks Solutions Inc.
|
| TQ1422 |
GSM 850/900 DCS/PCS H3-Filter TQM7M4102 PA to Transceiver Interface Module
GSM850/900 and DCS1800/PCS1900 Tx - Bandpass Filter
|
TRIQUINT[TriQuint Semiconductor]
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
