| PART |
Description |
Maker |
| LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| BSS138LT1 BSS138LT1G BSS138LT3G BSS138LT3 BSS138L |
Power MOSFET 200 mAmps, 50 Volts
Power MOSFET 200 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
| VN2406L VN2406LZL1 |
Small Signal MOSFET 200 mAmps, 240 Volts
|
ON Semiconductor
|
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| BS107A BS107ARL1G |
Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92
|
ON Semiconductor
|
| MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| VN0300L/D VN0300L-D |
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92
Small Signal MOSFET 200 mAmps60 Volts
|
ON Semiconductor
|
| BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号，逻辑电平，N-沟道增强型MOS场效应管（TO-92封装
|
ONSEMI[ON Semiconductor]
|
| BS107A BS107ARLRP BS107ARLRM BS107ARL1 BS107 BS107 |
Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92
From old datasheet system
Fast Recovery Glass Passivated Rectifier Diodes
|
ONSEMI[ON Semiconductor]
|
| MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
From old datasheet system
|
ON Semiconductor
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
