| PART |
Description |
Maker |
| TFDU4100-TT3 TFDU410005 TFDU4100-TR3 |
Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| HSDL-3211-021 |
HSDL-3211-021 · Low Power Serial 1.152Mbit/s InfraRed Transceiver
|
Agilent (Hewlett-Packard)
|
| TFBS4710-TT1 TFBS4710-TR1 |
Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation 串行红外收发器，爵士115.2千比秒，2.7 V.5 V工作电压
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TFDU6108-TR3 TFDU6108-TT3 |
Fast Infrared Transceiver Module (4 Mbit/s), IrDA Serial Interface Compatible, 2.7 V to 5.5 V Supply Voltage Range
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| SC16C652BIBS151 SC16C652BIB48157 SC16C652BIB48151 |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.) with 32-byte FIFOs and infrared (IrDA) encoder/decoder; Package: SOT313-2 (LQFP48); Container: Tray Pack, Bakeable, Single 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQFP48
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.) with 32-byte FIFOs and infrared (IrDA) encoder/decoder; Package: SOT313-2 (LQFP48); Container: Tray Pack, Bakeable, Multiple 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQFP48
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.) with 32-byte FIFOs and infrared (IrDA) encoder/decoder; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Single 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
|
NXP Semiconductors N.V.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology
OPTEK TECHNOLOGY INC
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
