PART |
Description |
Maker |
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
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Hynix Semiconductor, Inc.
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M9280 |
VDD CONTROL
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ETC List of Unclassifed Manufacturers
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EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6 |
VDD/VDDQ= 2.5V ± 0.2V
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Eorex Corporation
|
HY5PS121621BFP |
VDD ,VDDQ =1.8 +/- 0.1V
|
Hynix Semiconductor
|
EM47EM1688SBA-150 EM47EM1688SBA-125 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
2SK3322 |
Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
|
TY Semiconductor Co., Ltd
|
MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
MAX1153 MAX1153AEUE MAX1153BEUE MAX1154AEUE MAX115 |
Stand-Alone / 10-Channel / 10-Bit System Monitors with Internal Temperature Sensor and VDD Monitor Stand-Alone, 10-Channel, 10-Bit System Monitors with Internal Temperature Sensor and VDD Monitor "Stand-Alone, 10-Channel, 10- Bit System Monitors with Internal Temperature Sensor and VDD Monitor"
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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
|
MSK4324HU |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 BRUSHLESS DC MOTOR CONTROLLER, 15 A, CDFM43
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M.S. Kennedy, Corp.
|
SST29VE010-120-3I-EH SST29LE010-90-4C-N SST29VE010 |
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: No error against RF noise Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Open drain type Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type 1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式EEPROM Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type 1兆位28K的8)页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式EEPROM Logic IC; Function: Quad. Differential Line Receivers with 3-state outputs (EIA RS-422A, 423A); Package: DIP; Remarks: Interface IC 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
|
Silicon Storage Technology, Inc.
|
ISL12020 ISL12020CBZ ISL12020IBZ ISL12020IBZ-T |
REAL TIME CLOCK, PDSO8 Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation ±5ppm with Auto Day Light Saving
|
Intersil Corporation
|
CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite); VDD: 3.3 V; Input Frequency: 14.0625 MHz to 18.75 MHz; Output Frequency: 9.375 MHz to 400 MHz; # Out: 3
|
CYPRESS SEMICONDUCTOR CORP
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