PART |
Description |
Maker |
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
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Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
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IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM 55ns; 5V; 128K x 8 high-speed CMOS static RAM
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
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K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源 ASYNCHRONOUS STATIC RAM
|
ETC ICSI[Integrated Circuit Solution Inc]
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STK16C68-WF45I STK16C68 STK16C68-W25 STK16C68-W25I |
8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28 8K x 8 AutoStorePlus⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM 8K x 8 AutoStorePlus nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 8K x 8 AutoStorePlus?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
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SIMTEK[Simtek Corporation]
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IDT61298SA 61298SA_DS_21245 IDT61298SA12Y IDT61298 |
64K x 4 Static RAM From old datasheet system CMOS Static RAM
|
IDT
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S71JL064HA0 |
Stacked Multi-chip Product (MCP) Flash Memory And Psram CMOS 3.0Volt-only, Simultaneous Operation Flash Memories And Static RAM/pseudo-static RAM
|
AMD SPANSION
|
GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
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G-LINK Technology
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IS61C3216 IS61C3216NBSP IS61C3216-20TI IS61C3216-1 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K的16 HIGH-SPEED的CMOS静态RAM ASYNCHRONOUS STATIC RAM
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Integrated Silicon Solution, Inc. ICSI[Integrated Circuit Solution Inc]
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