| PART |
Description |
Maker |
| AM82731-006 2884 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM1214-100 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM80814-025 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMicroelectronics
SGS Thomson Microelectronics
|
| AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor
|
Philips Semiconductors
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
| BLS6G2933S-130 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
