PART |
Description |
Maker |
WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
7805B |
fixed-voltage monolithic integrated-circuit voltage regulators
|
Electronic Theatre Controls, Inc.
|
LB1848MC |
Monolithic Digital IC Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver
|
Sanyo Semicon Device
|
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
IXBH16N170A IXBT16N170A |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd. Hitachi Semiconductor
|
ECN3063 ECN3063SPR ECN3063SPV ECN3063SP |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd. Hitachi Semiconductor
|
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|