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K7Q161862 - 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36

K7Q161862_190248.PDF Datasheet

Part No.

K7Q161862 K7Q161862B K7Q163662B

Description

512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36

File Size

333.83K / 17 Page

Maker

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K7Q161854A-FC16

Maker: SAMSUNG

Pack: BGA

Stock: Reserved

Unit price for :

50: $11.08

100: $10.52

1000: $9.97

Email: oulindz@gmail.com

Homepage

http://www.samsung.com/Products/Semiconductor/

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Full text search : 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36

Related Part Number

PART	Description	Maker
K7Q161862 K7Q161862B K7Q163662B	512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C-	512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165	Samsung semiconductor
K7S1636U4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
KM736V989 KM718V089	512Kx36 & 1Mx18 Synchronous SRAM	Samsung Electronic Samsung semiconductor
K7K1636T2C K7K1618T2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7I163684B K7I161884B	512Kx36 & 1Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
IS61DDB41M18A	1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc

Related keyword From Full Text Search System

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