| PART |
Description |
Maker |
| DGD2117 DGD2118 DGD2117S8-13 DGD2118S8-13 |
SINGLE CHANNEL GATE DRIVER
|
Diodes Incorporated
|
| 1EDC40I12AH 1EDC60I12AH 1EDC20H12AH 1EDC05I12AH 1E |
Single channel IGBT gate driver IC in wide body package
|
Infineon Technologies A...
|
| 1EDI20H12AH 1EDI05I12AH 1EDI40I12AH |
Single channel IGBT gate driver IC in wide body package
Single channel IGBT gate driver IC in wide body package
|
Infineon Technologies A...
|
| 2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ACSL-6300 ACSL-6420 ACSL-6420-56R ACSL-6420-56T AC |
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER
ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% 多通道和双向，15 MBd的数字逻辑门光电耦合
(ACSL6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
(ACSL-6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
ACSL-6210-00R · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
ACSL-6400-00T · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
|
AGILENT TECHNOLOGIES INC
Glenair, Inc.
TE Connectivity, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| NLU1GT32MUTCG NLU1GT32AMX1TCG NLU1GT32CMX1TCG NLU1 |
Single 2 Input OR Gate, TTL Input 1G SERIES, 2-INPUT OR GATE, PDSO6
Single 2-Input OR Gate, TTL Level
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
