| PART |
Description |
Maker |
| BBY52-02W |
Varactordiodes - Silicon high Q hyperband tuning diode
|
Infineon
|
| BB640 |
Varactordiodes - Silicon variable capacitance diode for hyperband TV/VTR tuners
|
INFINEON[Infineon Technologies AG]
|
| BBY65 BBY65-02V |
Varactordiodes - Hyperabrupt Varactordiode for VCO Applications
SILICON TUNING DIODE
|
INFINEON[Infineon Technologies AG]
|
| BB689-02V |
Varactordiodes for Tunerapplications
|
Infineon
|
| 2SC3569 |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
NEC
http://
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| BAS20 BAS19 BAS21 Q62702-A95 Q62702-A113 Q62702-A7 |
Silicon Switching Diodes (High-speed/ high-voltage switch)
From old datasheet system
SILICON SWITCHING DIODES (HIGH-SPEED, HIGH-VOLTAGE SWITCH)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
