PART |
Description |
Maker |
MB81EDS51654510 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
MX25R1035F |
Wide Vcc Range, 1M-BIT
|
Macronix International
|
HYB25DC512160C |
(HYB25DC512160C / HYB25DC512800C) 512M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
S34MS08G2 |
8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded
|
Cypress Semiconductor
|
LP61L1024-15 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM
|
AMIC Technology
|
23L51220-90 |
512M-BIT (16M x 32) MASK ROM WITH PAGE MODE (SSOP ONLY) (for socket solution only)
|
Macronix International Co., Ltd.
|