| PART |
Description |
Maker |
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| GS840FH18AT-12 GS840FH18AGT-8.5I GS840FH32AGT-12I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100
250MHz 512K x 18 9Mb sync burst SRAM
225MHz 512K x 18 9Mb sync burst SRAM
200MHz 512K x 18 9Mb sync burst SRAM
166MHz 512K x 18 9Mb sync burst SRAM
150MHz 512K x 18 9Mb sync burst SRAM
133MHz 512K x 18 9Mb sync burst SRAM
150MHz 256K x 32 9Mb sync burst SRAM
166MHz 256K x 32 9Mb sync burst SRAM
225MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 32 9Mb sync burst SRAM
133MHz 256K x 36 9Mb sync burst SRAM
150MHz 256K x 36 9Mb sync burst SRAM
166MHz 256K x 36 9Mb sync burst SRAM
200MHz 256K x 36 9Mb sync burst SRAM
225MHz 256K x 36 9Mb sync burst SRAM
133MHz 256K x 32 9Mb sync burst SRAM
200MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM
256K x 18 128K x 32 128K x 36 4Mb Sync Burst
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816273CGC-333 GS816273CGC-300 GS816273CC-333I |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 2.3 ns, PBGA209
|
GSI Technology, Inc.
|
|
