PART |
Description |
Maker |
TCS59S6408CFTL-80 TCS59S6408CFT-80 TCS59S6408CFTL- |
2M×4Banks×8Bits Synchronous DRAM(2M×8位同步动态RAM) 200万4Banks × 8位同步DRAM00万8位同步动态RAM)的 4M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
|
Toshiba Corporation Toshiba, Corp.
|
SN8P04XX SN8P0404K SN8P0434S SN8P0406P |
OPT ROM:4096 16bits / RAM:128 8bits OPT ROM:4096 16bits , RAM:128 8bits
|
SONIX Technology Co., Ltd.
|
TC58V64ADC |
64-MBIT (8M X 8BITS) CMOS NAND E PROM (8M BYTE SmartMedia)
|
TOSHIBA[Toshiba Semiconductor]
|
SN8P0447Q SN8P0403S SN8P0404K SN8P0406P SN8P0434S |
OPT ROM:4096 16bits / RAM:128 8bits OPT ROM:4096 16bits , RAM:128 8bits
|
SONIX[SONiX Technology Company]
|
A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
HSD16M64F8V-F10 HSD16M64F8V-F12 HSD16M64F8V-F13 HS |
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V
|
Hanbit Electronics Co.,Ltd
|
M377S1723AT3 M377S3323AT0SDRAMDIMMINTEL1.2VERB M37 |
16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect 32MBx72 SDRAM DIMM with PLL & Register based on 16MBx8, 4Banks 4KB Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect 32MBx72 SDRAM DIMM with PLL & Register based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
HY5S6B6 |
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
|
Hynix Semiconductor
|
HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
T436416D T436416D-5C |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
T436416D-5CG T436416D-5S T436416D-5SG T436416D-6SG |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|