PART |
Description |
Maker |
BSS159N BSS169N |
Low Voltage MOSFETs - Depletion MOSFET, 60V, SOT-23,RDSon = 8Ohm, 0.13A, NL SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL OptiMOS Power-Transistor 的OptiMOS功率晶体 80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 8.1mOhm, 73A, LL OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
IRFIZ34V IRFIZ34VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
|
IRF[International Rectifier]
|
BUZ31 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
SPU11N10 SPD11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
|