| PART |
Description |
Maker |
| 29F200 M295V200BB45M1T M295V200BB45N1T M29F200BB45 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
Single SVS For 3.0V Systems W/Programmable Time Delay 8-SOIC -40 to 85
Single SVS For 3.0V Systems W/Programmable Time Delay 8-PDIP -40 to 85
Single Schmitt-Trigger Inverter 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
|
意法半导
STMicroelectronics N.V.
|
| M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器
Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48Z128 M48Z128-120CS1 M48Z128-120PM1 M48Z128-70CS |
1 Mbit 128Kb x8 ZEROPOWER SRAM 1兆位的SRAM 128KB的x8 ZEROPOWER
1 Mbit (128Kb x8) ZEROPOWER SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| M29W200 M29W200BB M29W200BT M29W200BB70N6T M29W200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPSE 19C 19#20 PIN RECP
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，引导块低压单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M48Z128Y-70PM1 M48Z128Y-85PM1 M48Z128-70PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| CY14B108K-ZS25XIT CY14B108K-ZS45XI CY14B108K-ZS45X |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
|
CYPRESS SEMICONDUCTOR CORP
|
| M29W200 M29W200BB M29W200BB120M1T M29W200BB120M6T |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMicroelectronics
|
| CY14B104M-ZSP20XCT CY14B104K-ZS25XI CY14B104M-ZSP2 |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock
4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
| M29W010 M29W010B M29W010B45K1T M29W010B45K6T M29W0 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
|
ST Microelectronics
STMicroelectronics
意法半导
|
| M48T129 M48T129Y-70PM1 M48T129V-85CS1 M48T129Y-85C |
3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM
Safety Sign; Legend:Danger Chlorine; External Height:7"; External Width:10"; Body Material:Polyester; Color:Red/Black RoHS Compliant: NA 3.3 - 5V兆位的SRAM 128KB的x8计时
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
