| PART |
Description |
Maker |
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| HM62G18256 |
4M Synchronous Fast Static RAM (256k-words ×18-bits)(4M同步快速静态RAM(256k×18) 4分同步快速静态存储器56k -字18位）分同步快速静态随机存储器56k字18位）
|
Hitachi,Ltd.
|
| LC36256AMLL-12W LC36256AMLL-85W LC36256AMLL-70W |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
| LC36256AML-10W LC36256AML-85W LC36256AML-70W LC362 |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
| AT28BV256 AT28BV256-20 AT28BV256-25 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
| EDD2504AKTA-6B-E EDD2504AKTA-7B-E |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
