| PART |
Description |
Maker |
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U128IT KM29U128T |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U128T |
16M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG
Siemens Semiconductor Group
|
| UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
| MBM29LV160B-12PCV MBM29LV160T-12PCV MBM29LV160T-80 |
16M (2M x??8/1M x 16) BIT
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO46
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
D10 - CONNECTOR ACCESSORY
16M (2M x′ 8/1M x 16) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| UPD23C16300GZ-XXX-MJH UPD23C16300F9-XXX-BC3 |
16M-bit (2M-wordx8-bit/1M-wordx16-bit) Mask ROM
|
NEC
|
