Part Number Hot Search : 
LC79431 HI2301 DG201ABK 78L09 00010 NS1N54 BT440 TL502
Product Description
Full Text Search

K4F641612C - 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

K4F641612C_120687.PDF Datasheet

 
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

File Size 842.92K  /  35 Page  

Maker


SAMSUNG[Samsung semiconductor]
Samsung Electronic



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4F641611D-TC60
Maker: SAMSUNG(三星)
Pack: TSOP
Stock: 10038
Unit price for :
    50: $2.55
  100: $2.42
1000: $2.29

Email: oulindz@gmail.com

Contact us

Homepage http://www.samsung.com/Products/Semiconductor/
Download [ ]
[ K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F64161 Datasheet PDF Downlaod from Datasheet.HK ]
[K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F64161 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for K4F641612C ]

[ Price & Availability of K4F641612C by FindChips.com ]

 Full text search : 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power


 Related Part Number
PART Description Maker
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
Samsung Electronic
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
Samsung Electronic
KM416C4100B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
SAMSUNG SEMICONDUCTOR CO. LTD.
K4F641612D K4F641612D-TI K4F641612D-TP K4F661612D- 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
SAMSUNG[Samsung semiconductor]
KM416C1200B KM416V1000B KM416V1200B KM416C1000B SA 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
KM416V4000C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16CMOS动态RAM(带快速页模式)) 4米16位的快速页面模式的CMOS动态RAM4米16位的CMOS动态随机存储器(带快速页模式))
Samsung Semiconductor Co., Ltd.
V53C16256 V53C16256H V53C16256HK60 256K x 16bit fast page mode CMOS dynamic RAM
256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL    4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
KM44V4104BK KM44V4104B 4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
Samsung semiconductor
Samsung Electronic
KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
Samsung Electronic
SAMSUNG[Samsung semiconductor]
VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
Vanguard International ...
Vanguard International Semiconductor, Corp.
 
 Related keyword From Full Text Search System
K4F641612C Serie K4F641612C ethernet transceiver K4F641612C ic marking K4F641612C Cirkuit diagram K4F641612C module
K4F641612C signal K4F641612C 查询 K4F641612C использование K4F641612C purpose K4F641612C Temperature
 

 

Price & Availability of K4F641612C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.92417001724243