| PART |
Description |
Maker |
| STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW8NC80Z |
N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET N沟道高达700V - 1.1欧姆- 7A条至247齐纳保护PowerMESH⑩三MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| MMF80R450P MMF80R450PTH |
800V 0.45(ohm) N-channel MOSFET
|
MagnaChip Semiconductor...
|
| STP6NB80 STP6NB80FP |
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
|
ST Microelectronics
|
| STW7NB80 |
N-CHANNEL 800V - 1.6 OHM - 6.5A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| STB12NK80Z-S |
N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET N沟道800V 0.65ohm - 10.5A I2SPAK齐保护的SuperMESH功率MOSFET
N-CHANNEL MOSFET with FAST DIODE
N-CHANNEL 800V - 0.65 OHM - 10.5A I2SPAK ZENER-PROTECTED SUPERMESH™ MOSFET
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STP12NK80Z 9567 |
N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
From old datasheet system
|
STMicroelectronics
|
| FQPF7N80 |
800V N-Channel MOSFET 3.8 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF3N80C FQP3N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
