| PART |
Description |
Maker |
| CAT28F010HI-12 CAT28F010HI90 |
1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| LC87F7LC8A |
CMOS IC FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| LC87F7CC8A |
FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F5JC8A |
FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
|
Mitsubishi Electric Corporation
|
| LC88F52H0A |
FROM 128K byte, RAM 6K byte on-chip 16-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F7DC8A10 |
FROM 128K byte, RAM 4K byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| MT5C1008C-30LL/MIL |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
|
Austin Semiconductor, Inc
|
|
