| PART |
Description |
Maker |
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
| Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor
PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
| 1N34A |
GERMANIUM DIODE 0.05 A, 75 V, GERMANIUM, SIGNAL DIODE, DO-7
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
| OA1182 |
GERMANIUM DIODE
|
BK
|
| OA1180 |
GERMANIUM DIODE
|
BK
|
| OA180 |
GERMANIUM DIODE
|
BK
|
