PART |
Description |
Maker |
MMDF3P03HD ON2187 ON2186 |
DUAL TMOS POWER MOSFET 30 VOLTS From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MMFT3055E |
MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc.
|
MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|