| PART |
Description |
Maker |
| SUM45N25-58 |
N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET
N-Channel 250-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| GMD81400 GMF11201 GMF10201 GMF90201 GMF10601 GMF10 |
CAPACITOR, VARIABLE, MICA, 250 V, 380 pF - 1300 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 880 pF - 2330 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 15 pF - 130 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 2000 V, 10 pF - 48 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 275 pF - 970 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 550 pF - 1600 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 65 pF - 340 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 450 pF - 1390 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 1300 pF - 2830 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 115 pF - 550 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 1150 pF - 2605 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 45 pF - 280 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 350 pF - 1180 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 190 pF - 760 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 780 pF - 2110 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 650 pF - 1890 pF, PANEL MOUNT
|
Sprague-Goodman Electronics, Inc.
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| SUU40N06-24 SUD40N06-24 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-251
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
|
Vishay Intertechnology, Inc.
|
| APT10025PVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 33A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| AD7911 AD7911ARM AD7911ARM-REEL AD7911AUJ-R2 AD791 |
2-Channel, 2.35 V to 5.25 V, 250 kSPS, 12-Bit A/D Converter
2-Channel, 2.35 V to 5.25 V 250 kSPS, 10-/12-Bit ADCs
|
AD[Analog Devices]
|
| MJ21194 MJ21193 ON1989 MJ2194 |
16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
MOTOROLA INC
ON Semiconductor
Motorola, Inc
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
|
