| PART |
Description |
Maker |
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030JVR |
POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT8075BVR APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT8015JVFR APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT8011JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 51A 0.110 Ohm
|
Advanced Power Technology
|
| FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FS |
27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
