| PART |
Description |
Maker |
| E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| 28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
|
Intel
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| A28F200BR-B A28F200BR-T |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
|
Intel Corp.
|
| CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC C |
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA165
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PQFP100
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 2.8 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 4兆位28K的36）流水线同步静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| A28F200BX-B |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) 2兆位56K × 8）开机区块快闪记忆体兆位28K的16）引导块闪速存储器
|
Intel Corp.
Intel, Corp.
|
| CY62147DV30 CY62147DV30LL-70ZSXI CY62147DV30L CY62 |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48
FLASH 128K X 16 TSOP-48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IS61VF25618A-6.5TQ IS61VF25618A-6.5B3 IS61VF12836A |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PQFP100
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PBGA165
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
