PART |
Description |
Maker |
MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 M |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
MX28F160C3TXAI-90G MX28F160C3B MX28F160C3BTC-11 MX |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的(x16)的闪存16M内存(x16)的SRAM接口的FCRAM 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71 ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc. Spansion, Inc.
|
TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
K8D1716UTC-TC09 K8D1716UTC-FI09 K8D1716UTC-FI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
LRS1805A |
Stacked Chip 64M (x16) Flash Memory 16M (x16) Smartcombo RAM
|
Sharp Electrionic Components
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6 1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp. Infineon Technologies AG NEC Corp.
|
KM416S1020BT-G10T |
CMOS 16M-Bit SDRAM
|
ETC
|
UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|