| PART |
Description |
Maker |
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM27C802CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| M5M5T5636UG-20 M5M5T5636UG-22 M5M5T5636UG-25 |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5V5636GP-20 M5M5V5636GP-22 M5M5V5636GP-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5V5636GP-1603 M5M5V5636GP-16 M5M5V5636GP-13 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN62334BTT-15 |
524288-word x 8-bit CMOS Mask Programmable ROM
|
Hitachi,Ltd.
|
| GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC]
N.A.
|
