PART |
Description |
Maker |
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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http:// Renesas Electronics Corporation
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M5M5V416WG-70LI M5M5V416BWG M5M5V416BWG-10H M5M5V4 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp. http://
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M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
http:// RENESAS[Renesas Electronics Corporation]
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M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
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M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM New Generation Dynamic RAM
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GoldStar LG[LG Semicon Co.,Ltd.] http://
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M5M4V16G50DFP-12 M5M4V16G50DFP-10 |
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
|
Mitsubishi Electric Corporation
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HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
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Hitachi Semiconductor
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M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 |
From old datasheet system 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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