| PART |
Description |
Maker |
| M12S16161A-10T M12S16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG |
512K x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| T431616D T431616E |
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT
|
| T431616D-7SG T431616D-7C T431616D-7CG T431616E-7C |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM 100万16内存12k × 16Bit的X 2Banks同步DRAM
|
TM Technology, Inc.
Electronic Theatre Controls, Inc.
|
| M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
| M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L32162A0712 M12L32162A-7BVG |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52L32321A-7.5BG M52L32321A-10BG M52L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung Electronic
Samsung semiconductor
|
| M52S32162A-10TG |
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
| K4S161622E-TC/I/E |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
